Effects of Miscut of PSS and MOVPE Growth Conditions on (112̄2) GaN
نویسنده
چکیده
In this work [1], the influence of sapphire mis-orientation on the quality of coalesced (11 2̄2 ) GaN layers grown on r-plane prestructured sapphire substrates (r-PSS) is investigated. It was found that the angle of the GaN (11 2̄ 2 ) plane towards the surface plane of the sapphire wafer can be adjusted by the mis-orientation of the substrate. Furthermore, we discovered that the c-direction of GaN is tilted by more than 1 ◦ towards the c-direction of the sapphire wafer. Moreover, the influence of the MOVPE growth temperature, V/III ratio and reactor pressure on the coalesced layer has been studied. While a high temperature and small V/III ratio are beneficial, the reactor pressure did not show any significant impact on the crystal quality and surface roughness.
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